The goal of this lab work was to characterize active doping profiles of III-V based samples using ECVP (Electrochemical Capacitance-Voltage Profiling). This work is a part of a larger project lead by LTM, which aims to reduce the reliance on bulk InP in HEMT and HBT devices for RF applications. As such, it aligns with sustainability goals, addressing ecological and geopolitical concerns related to critical metals in semiconductor manufacturing.

Methodology

The first part of the project consisted on proving the accuracy of the technique on well-known samples, before new samples, with higher complexity, could be analyzed. Additionally, the obtained results were systematically compared with previously gathered SIMS (Secondary Ion Mass Spectrometry) analytical results.